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U4090B
Monolithic Integrated Feature Phone Circuit
Description
The c controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with dc/dc converter, sidetone equivalent and ear protection rectifiers. The circuit is line powered and contains all components necessary for amplification of signals and adaptation to the line. An integrated voice switch with loudspeaker amplifier allows loudhearing or handsfree operation. With an anti-feedback function, acoustical feedback during loudhearing can be reduced significantly. The generated supply voltage is suitable for a wide range of peripheral circuits.
Features
D D D D D D D D D D D D D D D
DC characteristic adjustable Transmit and receive gain adjustable Symmetrical input of microphone amplifier Anti-clipping in transmit direction Automatic line loss compensation Symmetrical output of earpiece amplifier Built-in ear protection DTMF and MUTE input Adjustable sidetone suppression independent of sending and receiving amplification Speech circuit with two sidetone networks Built-in line detection circuit Integrated amplifier for loudhearing operation Anti-clipping for loudspeaker amplifier Improved acoustical feedback suppression Power down
D Voice switch D Tone ringer interface with dc/dc converter D Zero crossing detection D Common speaker for loudhearing and tone ringer D Supply voltages for all functional blocks of a
subscriber set
D Integrated transistor for short circuiting the line
voltage
D Answering machine interface D Operation possible from 10 mA line currents
Benefits
D Savings of one piezo electric transducer D Complete system integration of analog signal processing on one chip
D Very few external components
Applications
Feature phone, answering machine, fax machine, speaker phone
Speech circuit Voice switch
Audio amplifier
Loudhearing and Tone ringing
MC with EEPROM/ DTMF
94 8741
Tone ringer
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
1 (34)
Preliminary Information
U4090B
Block Diagram
2 (34)
GT MICO TXIN IMPSEL 21 31 7 1 3 600 44 33 STO VL 8 AGA IND SENSE V B 11 10 V MP 14 V MPS 13
94 8064
W
34
MIC1 TXA 900
5
MIC
MIC2 Impedance control VL I L I Supply Line detect AGA control Q S TX ACL
4
W
Power supply
V M 9 GND 6 PD 32 I REF 20 17 LIDET V RING 16
DTMF
DTMF
2
TTXA
42
Current supply
INLDR 28
Figure 1.
Transmit mute control
INLDT 27
TLDR
30
TLDT
29
26
Acoustical feedback suppression control
ATAFS
Receive attenuation RA2 -1 Mute receive control RA1 - + ST BAL - + - + 25 MUTX MUTR 35 36 40 41 39 38 RECO2 RECO1 GR RAC 37 STIL STIS 43 RECIN VMP + - 19 15
12
C OSC SW OUT
Preliminary Information
SAO
SA
22
SACL
TSACL
24
RFDO 18 THA
SAI
SAI
23
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
GSA
Tip hook switch C1 13 V R2 to STIN to m C 1 3 7 C8 VM 34 21 31 10 11 14 13 5 4 2 42 R6 28 27 16 15 Q1 C9 20 17 44 33 8 Ring
R3
V M C2 C4 C5 C6 R4 C3 R1
C7
R28
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
9 6 32 R5
Micro- phone
DTMF Generator
R27
C22
C21
RECO C20 R20
MICO
R19
U4090B
C19
Loudspeaker 12 22 24 23 25 35 40 R11 R13 R12 V M Earpeace C12 V M R9 41 39 C13 R10 R8 C11 36
C18 30 C17 29 R31 26
L1 19 R7 18 38 37 43 C10 STIN 2 (Option)
Figure 2. Application circuit for loudhearing
C16
Preliminary Information
V L STO
V M
C15
R17
C14
R16
R15
R14
Micro controller
VMP
U4090B
94 8849
3 (34)
U4090B
4 (34)
hook switch C2 R26 to STIN 1 3 33 8 34 VM 4 C21 42 R6 28 C18 30 C17 29 R18 12 22 C15 24 C14 R15 R14 R13 R12 R11 23 25 35 36 41 39 C13 R 10 STIN 2 (Option) Earpiece VM C12 VM R9 R8 C11 BC177 STN 40 38 37 43 C10 VB VL LOGTX R21 VMP 18 C16 26 19 R7 27 16 15 Q1 C9 20 17 2 9 6 32 21 31 7 10 44 11 14 13 5 to m C C8 Ring Micro- phone R1 13 V
R4
VM C3
R2
Tip C7
R25 R3
DTMF
R24
C25
C1
C4 C6
C5
C23
HF-Mic
C24
R23
R22
R5
RECO
C27 R30
R29
LOGTX
U4090B
C26
L1
Figure 3. Application for handsfree operation
Preliminary Information
Loud speaker
VM
R17
R16
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
94 8850
Micro- controller
U4090B
Typical value of external components
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C23 C24 C25 C26 C27 L1 R1 R2 100 nF 4.7 nF 10 mF 220 mF 47 mF 470 mF 820 nF 100 mF 100 nF 150 nF 68 nF 33 nF 10 mF 100 nF
1 mF
47 mF 10 mF
10 mF
68 nF 68 nF 1 mF 100 nF 6.8 nF 10 nF 100 nF 470 nF 33 nF 2.2 mH 27 kW 20 kW
R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 R19 R20 R21 R22 R23 R24 R25 R26 R27 R28 R29 R30 R31
> 68 kW 10 W 1.5 kW 62 kW 680 kW 22 kW 330 W 3 kW 62 kW 30 kW 62 kW 120 kW 47 kW 1 kW 1.2 W 30 kW 6.8 kW 6.8 kW 15 kW 330 kW 220 kW 68 kW 2 kW 3.3 kW 18 kW 2 kW 1 kW 12 kW 56 kW
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
5 (34)
Preliminary Information
U4090B
GT DTMF MICO MIC2 MIC1 PD IND VL GND SENSE VB SAO
Pin Description
1 2 3 4 5 6 7 8 9 10 11 44 43 42 41 40 39 38 37 36 35 34 TXIN RECIN TTXA 2 GR RECO1 RAC STIL STIS RECO2 MUTR VM STO IREF AGA TLDR TLDT INLDR INLDT ATAFS MUTX 15 SAI GSA 12 13 14 11 8 9 10 VL GND 7 IND 3 4 5 6 MICO MIC 2 MIC 1 PD DTMF Pin 1 Symbol Function A resistor from this pin to GND sets the GT
amplification of microphone and DTMF signals, the input amplifier can be muted by applying VMP to GT.
Input for DTMF signals, also used for the answering machine and handsfree input Output of microphone preamplifier Non-inverting input of microphone amplifier Inverting input of microphone amplifier Active high input for reducing the current consumption of the circuit, simultaneously VL is shorted by an internal switch The internal equivalent inductance of the circuit is proportional to the value of the capacitor at this pin, a resistor connected to ground may be used to reduce the dc line voltage
U4090B
12 33 32 31 30 29 28 27 26 25 24 23
94 7905 e
VMPS 13 VMP 14 SWOUT COSC VRING THA RFDO LIDET IMPSEL TSACL 15 16 17 18 19 20 21 22
16
Line voltage Reference point for dc- and ac-output signals SENSE A small resistor (fixed) connected from this pin to VL sets the slope of the dc characteristic and also effects the line length equalization characteristics and the line current at which the loudspeaker amplifier is switched on VB Unregulated supply voltage for peripheral circuits (voice switch), limited to typically 7 V SAO Output of loudspeaker amplifier VMPS Unregulated supply voltage for P, limited to 6.3 V VMP Regulated supply voltage 3.3 V for peripheral circuits (especially microprocessors), minimum output current: 2 mA (ringing) 4 mA (speech mode) SWOUT Output for driving external switching transistor COSC 40 kHz oscillator for ringing power converter
6 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
Pin 17 18 19 20 21 Symbol Function VRING Input for ringing signal protected by internal zener diode THA Threshold adjustment for ringing frequency detector RFDO Output of ringing frequency detector LIDET Line detect; output is low when the line current is more than 15 mA IMP- Control input for selection of line SEL impedance 1. 600 2. 900 3. Mute of second transmit stage (TXA); also used for indication of external supply (answering machine); last chosen impedance is stored TSACL Time constant of anti-clipping of speaker amplifier GSA Current input for setting the gain of the speaker amplifier, adjustment characteristic is logarithmical, or RGSA > 2 M, the speaker amplifier is switched off SA I Speaker amplifier input (for loudspeaker, tone ringer and handsfree use) MUTX Three state input of transmit mute: 1) Speech condition; inputs MIC1 / MIC2 active 2) DTMF condition; input DTMF active a part of the input signal is passed to the receiving amplifier as a confidence signal during dialing 3) Input DTMF used for answering machine and handsfree use; receive branch not affected ATAFS Attenuation of acoustical feedback suppression, maximum attenuation of AFS circuit is set by a resistor at this pin, without the resistor, AFS is switched off INLDT Input of transmit level detector INLDR Input of receive level detector Pin 29 30 31 Symbol Function TLDT Time constant of transmit level detector TLDR Time constant of receive level detector AGA Automatic gain adjustment with line current a resistor connected from this pin to GND sets the starting point max. gain change: 6 dB. IREF STO Internal reference current generation; RREF = 62 k; IREF = 20 A Side tone reduction output output resistance is approx. 300 , maximum load impedance: 10 k. Reference node for microphoneearphone and loudspeaker amplifier, supply for electret microphone (IM 700 mA) Three state mute input 1. Normal operation 2. Mute of ear piece 3. Mute of RECIN signal Condition of earpiece mute is stored
32 33
34
VM
22 23
35
MUTR
24
36 37 38 39 40 41
25
RECO 2 Inverting output of receiving amplifier STI S Input for side tone network (short loop) or for answering machine STI L Input for side tone network (long loop) RAC Input of receiving amplifier for ac coupling in feedback path RECO 1 Output of receiving amplifier GR A resistor connected from this pin to GND sets the receiving amplification of the circuit; amplifier RA1 can be muted by applying VMP to GR Time constant of anticlipping in transmit path RECIN Input of receiving path; input impedance is typically 80 kW TXIN Input of intermediate transmit stage, input resistance is typically 20 k TTXA
26
42 43 44
27 28
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
7 (34)
Preliminary Information
U4090B
DC line interface and supply voltage generation
The DC line interface consists of an electronic inductance and a dual port output stage, which charges the capacitors at VMPS and VB. The value of the equivalent inductance is given by L = RSENSE @ CIND @ (RDC @ R30) / (RDC + R30)In order to improve the supply during worst case operating conditions two PNP current sources - IBOPT and IMPSOPT - hand an extra amount of current to the supply voltages, when the NPNs in parallel are unable to conduct current. A flowchart for the control of the current sources (figure 5) shows, how a priority for supply VMPS is achieved.
VL
10 W SENSE RSENSE CIND 10 m F IND RDC
+ - - + + -
IBOPT
< 5 mA
IMPSOPT
< 5 mA
6.3 V VMPS
=
3.3 V VMP 3.3 V/ 2 mA VB
470 m F
30 kW R30
47 m F 220 m F
=
VOFFS
7.0 V
94 8047
Figure 4. DC line interface with electronic inductance and generation of a regulated and an unregulated supply
Y
VSENSE-VMPS>200 mV
VMPS < 6.3 V
N
N
Y VSENSE-VB>200 mV
N
IMPSOPT = 0 IBOPT = 0
Y N
VB < 6.3 V
Y Charge CMPS (IMPSOPT)
94 8058
Charge CB (IBOPT)
Reduce IBOPT (IMPSOPT = 0)
Figure 5. Supply capacitors CMPS and CB are charged with priority on CMPS
8 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
The U4090B contains two identical series regulators, which provide a supply voltage VMP of 3.3 V suitable for a microprocessor. In speech mode both regulators are active, because VMPS and VB are charged simultaneously by the DC-line interface. Output current is 4 mA. The capacitor at VMPS is used to provide the microcomputer with sufficient power during long line interruptions. Thus long flash pulses can be bridged or a LCD display can be turned on for more than 2 seconds after going on hook. When the system is in ringing mode, VB is charged by the on chip ringing power converter. In this mode only one regulator is used to supply VMP with max. 2 mA.
Supply structure of the chip
As a major benefit the chip uses a very flexible system structure, which allows simple realization of numerous applications such as: group listening phone handsfree phone ringing with the built in speaker amplifier answering machine with external supply The special supply topology for the various functional blocks is illustrated in figure 6.
V RING
RPC Voltage regulator
V B 7V VMP V MPS
Voltage regulator
VL
Power supply
6.3 V
QS PD ES IMPED
CONTR
IMPSEL
LIDET
LIDET
VLon
MIC, DTMF AGA, RA1, RA2 TX MUTE MUT REC, STBAL RECATT
RFDO
RFD
TXA TXACL
OFFSA COMP
SAI,SA SACL
AFS
94 8046
Figure 6. Supply of functional blocks is controlled by input voltages VL, VB, Vring and by logic inputs PD and IMPSEL
There are four major supply states: 1. 2. 3. 4. Speech condition Power down (pulse dialing) Ringing External supply
For line voltages below 1.9 V the switches remain in their quiescent state as shown the diagram. OFFSACOMP disables the group listening feature (SAI, SA, SACL, AFS) below line currents of approximately 10 mA. 2. When the chip is put into Power-down mode (PD = high), e.g. during pulse dialing, the internal switch QS shorts the line and all amplifiers are switched off. In this condition LIDET, voltage regulators and IMPED CONTR are the only active blocks.
1. In speech condition the system is supplied by the line current. If the LIDET-block detects a line voltage above the fixed threshold (1.9 V), the internal signal VLON is activated, thus switching off RFD and RPC and switching on all other blocks of the chip.
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
9 (34)
Preliminary Information
U4090B
3. During ringing the supply for the system is fed into VB via the ringing power converter (RPC). The only functional amplifiers are found in the speaker amplifier section (SAI, SA, SACL). 4. In an answering machine the chip is powered by an external supply via pin VB. This application demands a posibility to activate all amplifiers (except the transmit line interface TXA). Selecting IMPSEL = high impedance activates all switches at the ES line.
Acoustic feedback suppression
Acoustical feedback from the loudspeaker to the handset microphone may cause instability in the system. The U4090B offers a very efficient feedback suppression circuit, which uses a modified voice switch topology. figure 8 shows the basic system configuration.
TX Att Handset microphone Log Hybrid Att contr Line
Log
Loudspeaker
RX Att
94 8956
Figure 5. Basic voice switch system
Two attenuators (TX ATT and RX ATT) reduce the critical loop gain by introducing an externally adjustable amount of loss either in the transmit or in the receive path.The sliding control in block ATT CONTR determines, wether the TX or the RX signal has to be attenuated. The overall loop gain remains constant under all operating conditions. Selection of the active channel is made by comparison of
the logarithmically compressed TX- and RX- envelope curve. The system configuration for group listening, which is realized in the U 4090 B, is illustrated in figure 9. TXA and SAI represent the two attenuators, whereas the logarithmic envelope detectors are shown in a simplified way (operational amplifiers with two diodes).
10 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
VL GT MICO TIN INLDT TLDT STO VL ZL
VBG
- +
TXA Zint
SAO
AFS control Max att.
AGA
GSA SAI SAI TLDR - VBG + INLDR RECO1 GR RECIN
STIS
STO STN
94 8059
Figure 6. Integration of acoustic feedback suppression circuit into the speech circuit environment
A detailed diagram of the AFS (acountic feedback suppression) is given in figure 10. Receive and Transmit signals are first processed by logorithmic rectifiers in
order to produce the envelopes of the speech at TLDT and RLDT. After amplification a decision is made by the differential pair, which direction should be transmitted.
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
11 (34)
Preliminary Information
U4090B
TLDT TXA SAI
TX
RLDT INLDT AGA IAGAFS IAT IATAFS IATGSA
94 8060
AGA
RX
RLDR INLDR
IGSA
TLDR RATAFS
ATAFS
GSA
Figure 7. Accoustic feedback suppression by alternative control of transmit- and speaker amplifier gain
The attenuation of the controlled amplifiers TXA and SAI is determined by the emitter current IAT, which is comprised of three parts: IATAS IATGSA IAGAFS sets maximum attenuation decreases the attenuation, when speaker amplifier gain is reduced decreases the attenuation according to the loop gain reduction caused by the AGA- function
IAT = IATAFS - IATGSA - IAGAFS
DG = IAT * 0.67 dB/ mA
Figure 11 illustrates the principal relationship between speaker amplifier gain (GSA) and attenuation of AFS (ATAFS). Both parameters can be adjusted independently, but the internal coupling between them has to be considered. Maximum usable value of GSA is 36 dB. The shape of the characteristic is moved in the x-direction by adjusting resistor RATAFS, thus changing ATAFSm. The actual value of attenuation (ATAFSa), however, can be determined by reading the value which belongs to the actual gain GSAa. If the speaker amplifier gain is reduced, the attenuation of AFS is automatically reduced by the same amount, in order to achieve a constant loop gain. Zero attenuation is set for speaker gains GSA GSA0 = 36 dB - ATAFSm.
v
12 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
94 8957
ATAFS (dB) ATAFSm RATAFS RATAFS ATAFSa not usable
GSAo
GSAa
36 dB
GSA (dB)
Figure 8. Reducing speaker amplifier gain results in an equal reduction of AFS attenuation
94 8958
When Power Down is activated (during pulse dialing), all of the line current flows through the short circuiting transistor QS (see figure 6). As long as IL is above typ. 1.6 mA, output LIDET is low. This comparator does not use hysteresis.
IL
LIDET
94 8959
PD
Figure 9. Line detection with two comparators for speech mode and pulse dialling
LIDET
Line detection (LIDET)
The line current supervision is active under all operating conditions of the U4090B. In speech mode (PD = inactive) the line current comparator uses the same thresholds as the comparator for switching off the entire speaker amplifier. The basic behaviour is illustrated in figure 13. Actual values of ILON/ILOFF vary slightly with the adjustment of the DC-characteristics and the selection of the internal line impedance.
ILOFF
ILON
IL
Figure 10. Line detection in speech mode with hysteresis
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
13 (34)
Preliminary Information
U4090B
Ringing power converter (RPC)
RPC transforms the input power at VRING (high voltage/ low current) into an equivalent output power at VB (low voltage/ high current), which is capable of driving the low ohmic loudspeaker. Input impedance at VRING is fixed at 5 kW and the efficiency of the step down converter is approx. 65%.
7 RDC= 6 VL ( V ) RDC=130kW 5 RDC=68kW
Ringing frequency detector (RFD)
The U4090B offers an output signal for the microcontroller, which is a digital representation of the double ringing frequency. It is generated by a current comparator with hysteresis. Input voltage VRING is transformed into a current via RTHA. Thresholds are 8 mA and 24 mA. RFDO and VRING are in phase. A second comparator with hysteresis is used to enable the output RFDO, as long as the supply voltage for the microprocessor VMP is above 2.0 V.
4
3 10
94 9131
12
14
16
18
20
IL ( mA )
= ILON at line impedance = 600 W = ILOFF = ILON at line impedance = 900 W = ILOFF
Figure 11. Comparator thresholds depend on dc mask and line impedance
Absolute Maximum Ratings
Parameters Line current DC line voltage Maximum input current Junction temperature Ambient temperature Storage temperature Total power dissipation, Tamb = 60C Symbol IL VL IRING Tj Tamb Tstg Ptot Value 140 12 15 125 - 25 to + 75 - 55 to + 150 0.9 Unit mA V mA C C C W
Pin 17
14 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
Thermal Resistance
Junction ambient Parameters SSO44 Symbol RthJA Value 70 Unit K/W
Electrical Characteristics
f = 1 kHz, 0 dBm = 775 mVrms, IM = 0.3 mA, IMP = 2 mA, RDC = 130 kW, Tamb = 25C, RGSA = 560 kW, Zear = 68 nF + 100 W, ZM = 68 nF, Pin 31 open, VIMPSEL = GND, VMUTX = GND, VMUTR = GND, unless otherwise specified. Parameters DC characteristics Test Conditions / Pin Symbol Min Typ 2.4 5.0 7.5 9.4 Max Unit Figure
IL = 2 mA I = 14 mA DC voltage drop over circuit IL = 60 mA L IL = 100 mA
VL
4.6 8.8
5.4 V 10.0 26
Transmission amplifier, IL = 14 mA, VMIC = 2 mV, RGT = 27 kW, unless otherwise specified Adjustment range of transGT 40 45 50 dB mit gain RGT = 12 kW 47 49 Transmitting amplification 48 dB RGT = 27 kW 39.8 41.8 GT IL 14 mA, Frequency response DGT dB f = 300 to 3400 Hz Pin 31 open Gain change with current DGT dB IL = 14 to 100 mA Tamb = - 10 to + 60 Gain deviation DGT dB C CMRR of microphone CMRR 60 80 dB amplifier Input resistance of MIC RGT = 12 kW 50 Ri kW amplifier RGT = 27 kW 75 45 110 IL > 14 mA Distortion at line dt 2 % VL = 700 mVrms IL > 19 mA d < 5% VLmax 1.8 3 4.2 dBm Vmic = 25 mV Maximum output voltage CTXA = 1 mF
28 28 28 28 28 28 28 28
w
"0.5 "0.5 "0.5
28
Noise at line psophometrically weighted Anti-clipping attack time release time Gain at low operating current
IMPSEL = open RGT = 12 kW IL > 14 mA GT = 48 dB CTXA = 1 mF each 3 dB overdrive IL = 10 mA IMP = 1 mA RDC = 68 kW Vmic = 1 mV IM = 300 mA
VMICOmax no
-5.2 - 80 0.5 9 -72
dBm dBmp ms
28 28
GT
40
42.5
dB
28
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
15 (34)
Preliminary Information
U4090B
Parameters Distortion at low operating current Test Conditions / Pin IL = 10 mA IM = 300 mA IMP = 1 mA RDC = 68 kW Vmic = 10 mV IL = 100 mA, RAGA = 20 kW Symbol Min Typ Max Unit Figure
dt
5
%
28
Line loss compensation
DGTI
- 6.4
- 5.8
- 5.2
dB dB dB
28 28 28
Mute suppression IL 14 mA GTM 60 80 a) MIC muted (microphone Mutx = open preamplifier b) TXA muted (second IMPSEL = open GTTX 60 stage) Receiving amplifier, IL = 14 mA, RGR = 62 k, unless otherwise specified, VGEN = 300 mV IL 14 mA, single ended Adjustment range of -8 +2 GR differential MUTR = receiving gain -2 +8 GND
w w
dB
27
Receiving amplification Amplification of DTMF signal from DTMF IN to RECO 1, 2 Frequency response Gain change with current Gain deviation Ear protection differential MUTE suppression a) RECATT b) RA2 c) DTMF operation
RGR = 62 kW differential RGR = 22 kW differential IL 14 mA VMUTX = VMP IL > 14 mA, f = 300 to 3400 Hz IL = 14 to 100 mA Tamb = - 10 to + 60C IL 14 mA VGEN = 11 Vrms IL 14 mA MUTR = open VMUTR = VMP VMUTX = VMP
-1 GR - 1.75 7.5 GRM
DGRF DGR DGR
- 0.25
dB
27
w
7
10
13
dB dB dB dB Vrms
27 27 27 27 27
w w
"0.5 "0.5 "0.5
2.2 60
EP
DGR
dB
27
Output voltage d 2% differential Maximum output current d 2% Receiving noise psophometrically weigthed
v
IL = 14 mA Zear = 68 nF + 100 W Zear = 100 W Zear = 68 nF + 100 W IL 14 mA each output against GND RAGA = 20 kW, IL = 100 mA IL = 10 mA IMP = 1 mA IM = 300 mA VGEN = 560 mV RDC = 68 kW
0.775 4 ni Ro
DGRI
v
Vrms mA (peak) - 80 - 77 10 dBmp
W
27 27 27
w
Output resistance Line loss compensation
- 7.0
- 6.0
- 5.0
dB
27
Gain at low operating current
27 GR -2 -1 0 dB
16 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
Parameters AC impedance Distortion at low operating current Speaker Amplifier Minimum line current for operation Input resistance Gain from SAI to SAO Test Conditions / Pin VIMPSEL = GND VIMPSEL = VMP IL = 10 mA IMP = 1 mA VGEN = 560 mV RDC = 68 kW Symbol Zimp Zimp Min 570 840 Typ 600 900 Max 640 960 Unit
W W
Figure 27
dR
5
%
27
No ac signal Pin 24 VSAI = 3 mV, IL = 15 mA, RGSA = 560 kW RGSA = 20 kW Load resistance RL = 50 W, d < 5% VSAI = 20 mV IL = 15 mA IL = 20 mA IL > 15 mA IL = 15 mA Tamb = - 10 to + 60C IL = 15 mA, VL = 0 dBm, VSAI = 4 mV Pin 23 open IL = 15 to 100 mA IL = 15 to 100 mA IL = 15 mA f = 300 to 3400 Hz 20 dB over drive
ILmin 14 GSA 35.5
15 22
mA kW
31 31 31
36.5 -3
37.5
dB
Output power
31 PSA PSA nSA 3 7 20 200 mW
Output noise (Input SAI open) psophometrically weighted Gain deviation
mVpsoph
dB
31 31
DGSA
VSAO
"1
- 60
Mute suppression Gain change with current Resistor for turning off speaker amplifier Gain change with frequency
dBm dB MW dB ms ms
31 31 31 31 31 31
DGSA
RGSA 0.8 1.3
"1
2
DGSA
"0.5
Attack time of anti-clipping tr 5 Release time of anti-cliptf 80 ping DTMF-Amplifier Test conditions: IMP = 2 mA, IM = 0.3 mA, VMUTX = VMP Adjustment range of DTMF IL = 15 mA GD 40 50 gain Mute active IL = 15 mA, VDTMF = 8 mV DTMF amplification GD 40.7 41.7 42.7 Mute active: MUTX = VMP Gain deviaton IL = 15 mA Tamb = - 10 to + 60 C GD
dB
29
dB
29
"0.5
dB
29
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
17 (34)
Preliminary Information
U4090B
Test Conditions / Pin RGT = 27 kW, Input resistance RGT = 15 kW I 15 mA Distortion of DTMF signal L VL = 0 dBm Gain deviation with current IL = 15 to 100 mA AFS Acousting feedback suppression Adjustment range of IL 15 mA attenuation IL 15 mA, IINLDT = 0 mA Attenuation of transmit RATAFS = 30 kW gain IINLDR = 10 mA Parameters Symbol Ri dD
w w w w w
Min 60 26
Typ 180 70
Max 300 130
Unit kW % dB
Figure 29 29 29
DGD
0
"0.5
50
2
dB
31
DGT DGSA
1.5
45
dB
31
Attenuation of speaker amplifier
IL 15 mA IINLDP = 0 m RATAFS = 30 kW IINLDR = 10 m
50
dB V
31 31
AFS disable IL 15 mA VATAFS Supply voltages, Vmic = 25 mV, Tamb = - 10 to + 60C IL = 14 mA, VMP VMP RDC = 68 kW IMP = 2 mA IL = 100 mA VMPS VMPS RDC = inf., IMP = 0 mA IL 14 mA, VM VM IM = 700 mA RDC = 130 kW IB = + 20 mA, VB VB IL = 0 mA Ringing power converter, IMP = 1 mA, IM = 0 Maximum output power VRING = 20.6 V PSA RFDO: low to high VRINGON Threshold of ring VHYST frequency detector = VRINGON - RINGOFF VHYST Input impedance VRING = 30 V RRING f = 300 Hz to 3400 Hz Input impedance in speech RRINGSP IL > 15 mA, mode
3.1
3.3
3.5
V
26
6.7
V
26
w
1.3 7
3.3 7.6
V V
26 26
20 17.5 11.0 5
mW V 6 kW kW
30 30 30 30
4 150
VRING = 20V + 1.5Vrms
Logic-level of frequency detector Ring detector enable Zener diode voltage
VRING = 0 V VB = 4 V VRING = 25 V VRING = 25 V, RFDO high IRING = 25 mA
0 VRFDO VMP VMPON
VRINGmax
V 1.8 30.8 2.0 2.2 33.3 V V
30 30 30
18 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
Parameters MUTR Input MUTR input current Test Conditions / Pin VMUTR = GND IL > 14 mA VMUTR = VMP Mute low; IL > 14 mA Mute high; IL > 14 mA PD active, IL > 14 mA VPD = VMP PD = active PD = inactive IL = 14 mA, PD = active IL = 100 mA, PD = active Symbol Min Typ - 20 IMUTE +10 VMUTE VMUTE
VMP-0.3 V
Max
Unit
Figure
- 30 0.3
mA
V V
32 32 32
MUTR input voltage PD Input PD input current Input voltage
Ipd Vpd Vpd VL VL 2
9 0.3 1.5 1.9
uA V
32 32
Voltage drop at VL
V
32
Input characteristics of IMPSEL IL 14 mA Input current VIMPSEL = VMP VIMPSEL = GND
w
IIMPSEL IIMPSEL VIMPSEL VIMPSEL IMUTX IMUTX VMUTX VMUTX ILON ILOFF ILONPD 0.8
VMP-0.3 V VMP-0.3 V
18 - 18
mA mA
V 0.3 V
32 32 32
Input voltage MUTX input Input current Input voltage Line detection Line current for LIDET active Line current for LIDET inactive Current threshold during power down
Input high Input low VMUTX = VMP VMUTX = GND Input high Input low
20 - 20
30 - 30
mA mA
V V
32 32 32
0.3
PD = inactive PD = inactive VB = 5 V, PD = active
12.6 11.0 1.6 2.4
mA mA mA
26 26 26
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
19 (34)
Preliminary Information
U4090B
U 4090 B - Control
0 IMPSEL Line-impedance = 600 W TXA = on ES = off Line-impedance = 600 W TXA = off ES = on Line-impedance = 900 W TXA = off ES = on Line-impedance = 900 W TXA = on ES = off MODE Speech 0 MUTX MIC 1/2 transmit enabled receive enable AFS = on AGA = on TXACL = on DTMF transmit enabled receive enable AFS = on AGA = on TXACL = on DTMF transmit enabled DTMF to receive enable AFS = off AGA = off TXACL = off MODE Speech
0 to Z
Transmit-mute Z Transmit-mute
1 to Z
For answering machine
1
Speech 1
DTMF dialling
0
0 to Z
1 to Z
MUTR RA2 = on RECATT = on STIS + STIL = on RA2 = on RECATT = off STIS = on, STIL = off RA2 = off RECATT = off STIS = on, STIL = off AGA off for STIS RA2 = off RECATT = on STIS + STIL = on
MODE Speech Logic-level 0 = < (0.3 V) Z = > (1 V) < (VMP - 1 V) or (open input) 1 = > (VMP - 0.3 V) RECATT = Receive attenuation STIS, STIL = Inputs of sidetone balancing amplifiers ES = External supply AFS = Acoustical feedback supression control AGA = Automatic gain adjustment RA2 = Inverting receive amplifier TXACL = Transmit anticlipping control
For answering machine For answering machine
1
Speech + earpeace mute
20 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
94 8856
Figure 12. Typical DC Characteristic
GT (dB)
RGT (kohm)
94 8860
Figure 13. Typical adjustment range of transmit gain
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
21 (34)
Preliminary Information
U4090B
94 8859
Figure 14. Typical adjustment range of receive gain (differential output)
948855
Figure 15. Typical AGA-Characteristic
22 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
U4090B
94 8858
Figure 16. Typical load characteristic of VB for a maximum (RDC = infinity) DC-characteristic and 3 mW loudspeaker output
94 8874
Figure 17. Typical load characteristic of VB for a medium DC-characteristic (RDC = 130 kW) and 3 mW loudspeaker output
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
23 (34)
Preliminary Information
U4090B
94 8861
Figure 18. Typical load characteristic of VB for a minimum DC-characteristic (RDC = 68 kW) and 3 mW loudspeaker output
24 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
Mico 47 nF 36 kW 3 kW VMP open 3 kW RGR 10 m F IM ZEAR 41 40 39 38 37 36 35 34 33 32 31 30 29 100m F 10 m F 10 m F 62 k W 3.3 nF 28
VL VM VM VM
47 nF
36 kW
Figure 19. Basic test circuit
1 10 W 600 W RDC S1 22 mF IL 4.7 nF
2
3
4
5
6
7
8
9
10
11
12
13
14 47 m F
15
16
17 68 nF
18
19 680 k W IMP
20
21 1 mF
22
Preliminary Information
U4090B
68 nF 10 m F 47 m F 1000 m F 50 W BC556 IDC 220 mF 2.2 mH SD103A
RGT
1 kW
VM
S2 open VRing DC VMP
U4090B
reference figure for not connected pins S1 = closed: speech mode S2 = closed: ringer mode
94 9132
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
VMP open 3.3 nF 27 26 2 MW RGSA 25 24 23
220 nF
150 nF
1m F
44
43
42
25 (34)
U4090B
1 68 nF 10m F 4.7 nF b IB RDC V DC IL VL VMP S1 open a VB 10 W 220 m F 1000 m F 47 m F
2
3
4
5
6
7
8
9
10
11
12
13
14
15 IMP
16
17
18
19
20
21
22
RGT
Figure 20. DC characteristics, line detection
Preliminary Information
ZEAR IM 62 k W 32 31 30 29 28 27 40 39 38 37 36 35 34 33
VLIDET
V
1m F
VMIC
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
Line detection: S1a VB (external supply): S1b open pins should be connected as shown in figure 25
94 9133
26 (34)
VM RGR RAGA 10m F 100m F 30 k W RGSA 26 25 24 23
Mico
VL
220 nF 150 nF 1 m F
44
43
42
41
U4090B
open VM VMP VMP 10 m F RGR ZEAR S3 30 29 28 27 26 25 24 23 100 m F IM 62 k W RAGA
VZEAR, dr
open
Mico
VL
220 nF 150 nF 1 m F
1 68 nF 10 m F VDTMF
4.7 nF
2 10 W IL V 22 m F S1 b VGEN AC a VLR 220 m F 1000 m F 47 m F
3
4
5
6
7
8
9
10
11
12
13
14
15 IMP
16
17
18
19
20
21 1mF
22
Figure 21.
RGT
220 nF V
1 kW
RDC 600 W
V MP open
S2
Preliminary Information
U4090B
Mute suppression: open pins should be connected as shown in figure 25
VM
Line loss compensation: D GRI = GR (at IL = 100 mA) -GR (at IL = 14 mA), S3 = closed Receiving noise: S1a Receive amplification: GR = 20*log ( VZEAR/VLR) dB (S1 = b, S2 open) DTMF-control signal: GRM = 20*log (VZEAR/VDTMF) dB (S1 =a, S2 = closed) AC-impedance: (VLR/ (VGEN - VLR)) * ZL a) RECATT: D GR = 20*log (VLR/VZEAR) dB +GR, MUTR = open b) RA2: D GR = 20*log (VLR/VZEAR) dB + GR, MUTR = VMP c) DTMF operation: D GR = 20*log VLR/VZEAR) dB + GR, MUTX = VMP
94 9134
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
41 40 39 38 37 36 35 34 33 32 31
44
43
42
U4090B
27 (34)
U4090B
1 68 nF S1 b S2 4.7 nF RDC IL Transmitting amplification GT = 20*log Vmic VCM 600 V a 22 mF Line loss compensation: 25 k a 10 mF 10 W 220 mF 1000 m F 47
2
3
4
5
6
7
8
9
10
11
12
13
14
15 I MP
16
17
18
19
20
21 1 mF V MP open
22
RGTVMICO max
V
mF
25 k
Figure 22. Transmission amplifier
W W
VL Vmic
Preliminary Information
U4090B
AC
S1
W
VL, dt, n o
GTI D GT (at IL = 100 mA) -GT (at IL = 14 mA), S3 = closed = 50 k VL (S2 = closed) -1 VL (S2 = open)
Gain change with current: GTI = GT (at IL = 100 mA) -GT (at IL = 14 mA) D Input resistance: Ri =
b
1 mF
Common mode rejection ratio: CMRR = 20*log
VCM + GT with S1b, S2 = closed, VL VL (at MUTX = low) Mute suppression: GTM = 20*log VL (at MUTX = open) VL (at IMPSEL = low) GTTX = 20*log VL (at IMPSEL = open) open pins should be connected as shown in figure 25
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
S3 = open
94 9135
28 (34)
open VM open V MP RGR RAGA IM S3 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 62 k ZEAR 100 m F 10 m F V MP
Mico
VL
220 nF
150 nF
1 mF
W
44
43
42
Mico VMP 10 m F 100 mF ZEAR IM 62 k W
VL
VM
open
1 220 mF 1000 mF 47 mF
2
3
4
5
6
7
8
9
10
11
12
13
14
15 IMP
16
17
18
19
20
21
22
68 nF 10 mF VDTMF IL RDC 4.7 nF V VL: S3 = closed 10 W
Figure 23. DTMF amplifier
RGT
1 mF
Preliminary Information
40 39 38 37 36 35 34 33 32 31 30 29 28
220 nF
1kW
V
VM
S3
50 k W
VL 50kW: S3 = open dD
DTMF-amplifier: 20log (VL/VDTMF) dB
W Input resistance: (VL50K / (VL - VL50k)) * 50k
Open pins should be connected as shown in figure 25
VGEN3
U4090B
AC
94 9136
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
27 26 25 24 23
220 nF 150 nF 1 m F
RGR
44
43
42
41
U4090B
29 (34)
U4090B
1 10 W VSAO RDC 4.7 nF 50 W IMP 47m F 1000 mF
2
3
4
5
6
7
8
9
10
11
12
13
14
47 m F
15
16
17
680 kW 68 nF S5 V BC556 ramp
18
19 V
20 VRFDO
21
22 1 mF
Figure 24. Ringing power converter
68 nF
10 mF
Preliminary Information
100 m F 40 39 38 37 36 35 34 33 32 31 30 29 28 27
VRING IRING VMP VRING 1.5 V 20 V
S1
S2
S3 IRING ramp
S4
IL
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
220 mF
2.2 mH
SD103A
20.6 V DC DC DC
94 9138
30 (34)
VSAI 1.8 Vpp 1 kHz 100 nF RGSA 26 25 24 23 62 k W
1) Max. output power: PSA =
Vsao2 (S4 closed) RSAO 2) Threshold of ringing frequency detector: detecting VRFDO, when driving VRING from 2 V to 22 V (VRINGON) and back again (VRINGOFF) (S2 = closed) VRING 3) Input impedance: RRING = (S3 = closed) IRING 4) Input impedance in speech mode (IL > 15 mA): RRINGSP = Vring (S1 = closed) Iring 5) Ring detector enable: detecting VRFDO, when driving VMP from 0.7 V to 3.3 V (VMPON) and back again (VMPOFF) (S5, S3 = closed)
Open pins should be connected as shown in figure 25
44
43
42
41
U4090B
30 k W VM IINLDR IINLDT
VATAFS
Mico 10 mF 62 kW ZEAR 10 mF off S4 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 10 mF
220 nF
V
VSAI
1 68 nF 220 m F
1000m F
2 10 mF 47 m F
3
4
5
6
7
8
9
10
11
12
13
14
15 IMP
16
17
18
19 VLIDET
20
21
22
RGT RDC 10 W 47 m F
S1
V
1mF
Figure 25. Speaker amplifier
VMIC 4.7 nF 600 W 22 m F 50 W
Preliminary Information
U4090B
VL V IL V VSAO, S4 = closed VZIN, S4 = open n SA 2
Input impedance: (VZIN/(VSAO - VZIN)) * RIN
Gain from SAI to SAO: 20*log (VSAO / VSAI) dB
U4090B
Output power: PSA =
VSAO RSAO Attenuation of transmit gain: S1 = closed Open pins should be connected as shown in figure 25
94 9137
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
RGR RGSA 20 kW 24 23
220 nF 150 nF
1m F
44
43
42
31 (34)
U4090B
1 68 nF Ipd
10 220 F 1000 F
2 10m F
4.7 nF RDC
3
4
5
6
7
8
9
10
11
12
13
14
47 F
15
16
17
18
19
20
21
22
Figure 26. Input characteristics of io-ports
Preliminary Information
10m F ZEAR IMUTR IM 35 34 33 32 31 30 29 28 36 41 40 39 38 37 62 kW 27
100 m F
RGT
W m m
m
IMP
IIMPSEL
1F
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
open Vpd VMP V IL VL
VMP
Open pins should be connected as shown in figure 25
94 9139
32 (34)
VMP VM RGSA IMUTX 26 25 24 23 VMP
RGR
44
43
42
U4090B
m
U4090B
Ordering Information
Type U4090B-FN Package SSO44
Dimensions in mm
Package: SSO44
94 8888
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96
33 (34)
Preliminary Information
U4090B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
34 (34)
Preliminary Information
TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96

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